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BluGlass is an Australian public company listed on the Australian Stock Exchange to bring to market a breakthrough in the semiconductor technology industry.

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BLUSOLAR - NITRIDE CPV

BluSolar is a wholly owned subsidiary of BluGlass Limited, established to explore and commercialise an exciting breakthrough in the solar industry. BluSolar is working towards the development of a nitride solar cell using BluGlass’ patented manufacturing technology, remote plasma chemical vapour deposition (RPCVD) based manufacturing technology.
 

Although there are many materials from which solar cells can be developed, there is an emerging material family with the potential to convert almost the full spectrum of sunlight – from the infrared, visible and ultraviolet – to electrical power. This material family is BluGlass’ area of expertise – group III nitrides.



Indium gallium nitride (InGaN) semiconductors have many advantages over current materials making them an exciting prospect for new high efficiency solar cell applications.



InGaN solar cells have the potential to be long lasting, relatively inexpensive and importantly the most efficient ever created. 



This potential comes from the fact that InGaN has a direct band gap with wide tunability. These properties potentially allow more energy from the solar spectrum to be captured efficiently into the cell and converted to power. Research has stated that InGaN solar cells could produce efficiencies of more than 50% which would be a major breakthrough in solar cell efficiency far exceeding what is available today.

BluGlass' RPCVD process has great potential to grow high indium content InGaN when compared to MOCVD due to its low temperature process.



BluSolar will license the RPCVD process from BluGlass Limited.

WHY NITRIDE SOLAR

InGaN is a single material solution with the potential to be tuned to capture a large spectrum of the solar radiation into a solar cell to achieve better than 50% solar energy conversion. 



​The above example of an InGaN solar cell shows a cell with three InGaN layers that have different bandgaps capable of absorbing multiple wavelengths of solar radiation.



​Indium gallium nitride (InGaN) has what is called a 'direct band-gap' with wide tunability. This allows InGaN to be tuned to match almost the entire solar spectrum including infrared, visible and ultraviolet light.  These properties allow more energy from the solar spectrum to be captured efficiently into the cell and converted to power.