RPCVD FOR LASER DIODES

RPCVD has a number of commercial advantages for the manufacture of GaN Laser Diodes:

BluGlass’ patented remote plasma chemical vapour deposition (RPCVD) platform and unique tunnel junction capabilities offers laser diode manufacturers a number of unique performance and cost advantages over the industry incumbent (MOCVD) technology including:

Higher performing devices
Reduced contact and device resistance
Lower optical loss
Unique laser diode design, RPCVD tunnel junction technology enables replacement of p-AlGan cladding layers with low resistance n-AlGaN

BluGlass is developing GaN Laser Diodes for multiple end-use markets:

Industrial cutting and welding (initial target market)
Laser displays
Automotive lighting
Scientific and medical applications

THE NEED

THE SOLUTION

PHOTONICS WEST PAPER

The Laser Diode market demands high-brightness, high-efficiency GaN laser diodes, for a wide variety of end-use customers, in multiple applications, including industrial cutting/welding, laser displays and automotive lighting.

Technology advantages to improve LD performance and efficiency while reducing costs will be required for this next phase of market growth and GaN LD technology adoption.

There exist many unmet needs for custom LD development within select low-volume yet high value applications - and BluGlass' LD program aims to address these needs.

BluGlass' unique RPCVD and Active-As-Grown (AAG) epitaxial growth technology enable a new Tunnel Junction-integrated GaN laser diode.

This new design and associated manufacturing technology exploits our existing, patented RPCVD process and is expected to enable higher-brightness, higher-efficiency laser diodes to be produced with lower manufacturing costs at commercial scale at BluGlass' state-of-the-art Silverwater manufacturing facility in NSW, Australia.

BluGlass presents RPCVD paper at SPIE Photonics West in San Francisco, USA (www.spie.org), the leading global event for the photonics and laser industries.

The paper presents BluGlass’ recent laser diode (LD) development work, utilising the company’s unique ‘active-as-grown’ (AAG) tunnel junctions to improve conversion efficiency in lasers.

DOWNLOAD TECHNICAL PRESENTATION

INVESTOR SUMMARY & PRESENTATION

TECHNOLOGY ADVANTAGES OF RPCVD FOR LASER DIODE MANUFACTURE

Active-As-Grown (AAG) Technology

Unique technology advantage proprietary to BluGlass' RPCVD deposition technology

Higher performing devices

Higher laser diode brightness and efficiencies
Reduced optical loss
Lower contact and device resistance

Productivity and cost improvements

New laser diode epitaxy design enables downstream process optimisation:
- fewer process/fabrication steps
- Lower laser diode cost to end user

Unique laser diode design

RPCVD's Active-As-Grown tunnel junction technology enables the replacement of resistive p-AlGaN cladding layers with lower resistance n-AlGaN
n-AlGaN layers can be used to efficiently confine the light within the laser diode; removing performance constraints currently inherent in laser diode devices by reducing optical losses to improve device brightness and efficiency
RPCVD can deliver the tunnel junctions and n-AlGaN layers at commercial wafer scales to deliver these laser diode performance advantages